IRFP362
Part NoIRFP362
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)400 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn250mOhm @ 13A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id100 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id4000 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds250W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247
MountingTypeTO-247-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2635
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.6157 | |
| 10 | 4.5234 | |
| 100 | 4.3849 | |
| 1000 | 4.2464 | |
| 10000 | 4.0618 |
Associated Product
)
