HTNFET-D
Part NoHTNFET-D
ManufacturerHoneywell
DescriptionMOSFET N-CH 55V 8CDIP
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesHTMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)55 V
Current-ContinuousDrain(Id)@25°C-
DriveVoltage(MaxRdsOn5V
MinRdsOn)400mOhm @ 100mA, 5V
RdsOn(Max)@Id2.4V @ 100µA
Vgs4.3 nC @ 5 V
Vgs(th)(Max)@Id10V
Vgs(Max)290 pF @ 28 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tj)
PowerDissipation(Max)-55°C ~ 225°C (TJ)
OperatingTemperatureThrough Hole
MountingType8-CDIP-EP
SupplierDevicePackage8-CDIP Exposed Pad
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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4222
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Associated Product
