IXFH10N100P
Part NoIXFH10N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 10A TO247AD
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 5A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs56 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3030 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature380W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AD (IXFH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6391
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.0134 | |
| 10 | 7.8531 | |
| 100 | 7.6127 | |
| 1000 | 7.3723 | |
| 10000 | 7.0518 |
Associated Product
