IXFH58N20
RoHS

IXFH58N20

Part NoIXFH58N20
ManufacturerIXYS
DescriptionMOSFET N-CH 200V 58A TO247AD
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ECAD Module IXFH58N20
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Specification
PackageTube
SeriesHiPerFET™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)40mOhm @ 29A, 10V
RdsOn(Max)@Id4V @ 4mA
Vgs220 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AD (IXFH)
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 17651
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product