IXFK32N100P
Part NoIXFK32N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 32A TO264AA
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)320mOhm @ 16A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs225 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)14200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature960W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-264AA (IXFK)
SupplierDevicePackageTO-264-3, TO-264AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18295
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 26.57 | |
| 10 | 26.0386 | |
| 100 | 25.2415 | |
| 1000 | 24.4444 | |
| 10000 | 23.3816 |
Associated Product
