IXFN40N110Q3
Part NoIXFN40N110Q3
ManufacturerIXYS
DescriptionMOSFET N-CH 1100V 35A SOT-227B
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Q3 Class
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1100 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)260mOhm @ 20A, 10V
RdsOn(Max)@Id6.5V @ 8mA
Vgs300 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)14000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature960W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7812
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available for immediate sale in a store
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Associated Product
