IXFP7N100P
RoHS

IXFP7N100P

Part NoIXFP7N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 7A TO220AB
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ECAD Module IXFP7N100P
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Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.9Ohm @ 3.5A, 10V
RdsOn(Max)@Id6V @ 1mA
Vgs47 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2590 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 15972
Pricing
QTY UNIT PRICE EXT PRICE
1 6.6711
10 6.5377
100 6.3375
1000 6.1374
10000 5.8706
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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