IXFQ10N80P
Part NoIXFQ10N80P
ManufacturerIXYS
DescriptionMOSFET N-CH 800V 10A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.1Ohm @ 5A, 10V
RdsOn(Max)@Id5.5V @ 2.5mA
Vgs40 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2050 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3P
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7452
Pricing
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Associated Product
