IXTA1R6N100D2
Part NoIXTA1R6N100D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 1.6A TO263
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C1.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)10Ohm @ 800mA, 0V
RdsOn(Max)@Id-
Vgs27 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)645 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5725
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.476 | |
| 10 | 4.3865 | |
| 100 | 4.2522 | |
| 1000 | 4.1179 | |
| 10000 | 3.9389 |
Associated Product
