IXTA1R6N50D2
Part NoIXTA1R6N50D2
ManufacturerIXYS
DescriptionMOSFET N-CH 500V 1.6A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C1.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.3Ohm @ 800mA, 0V
RdsOn(Max)@Id-
Vgs23.7 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)645 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5638
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.3197 | |
| 10 | 3.2533 | |
| 100 | 3.1537 | |
| 1000 | 3.0541 | |
| 10000 | 2.9213 |
Associated Product
