SUD20N10-66L-GE3
RoHS

SUD20N10-66L-GE3

Part NoSUD20N10-66L-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 16.9A TO252
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ECAD Module SUD20N10-66L-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C16.9A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)66mOhm @ 6.6A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)860 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.1W (Ta), 41.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-252
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
Qualification
In Stock: 12608
Pricing
QTY UNIT PRICE EXT PRICE
1 0.7052
10 0.6911
100 0.6699
1000 0.6488
10000 0.6206
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SIS112LDN-T1-GE3
SIS112LDN-T1-GE3
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