IXTH2N170D2
RoHS

IXTH2N170D2

Part NoIXTH2N170D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1700V 2A TO247
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ECAD Module IXTH2N170D2
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Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C2A (Tj)
DriveVoltage(MaxRdsOn0V
MinRdsOn)6.5Ohm @ 1A, 0V
RdsOn(Max)@Id-
Vgs110 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3650 pF @ 10 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature568W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 6888
Pricing
QTY UNIT PRICE EXT PRICE
1 25.724
10 25.2095
100 24.4378
1000 23.6661
10000 22.6371
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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SIC MOSFET BVDSS: >1000V TO247-4