IXTH3N120
Part NoIXTH3N120
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 3A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.5Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature200W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 (IXTH)
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8594
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.193 | |
| 10 | 5.0891 | |
| 100 | 4.9333 | |
| 1000 | 4.7776 | |
| 10000 | 4.5698 |
Associated Product
