IXTN120P20T
Part NoIXTN120P20T
ManufacturerIXYS
DescriptionMOSFET P-CH 200V 106A SOT227B
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchP™
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C106A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)30mOhm @ 60A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs740 nC @ 10 V
Vgs(th)(Max)@Id±15V
Vgs(Max)73000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature830W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6184
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 51.2344 | |
| 10 | 50.2097 | |
| 100 | 48.6727 | |
| 1000 | 47.1356 | |
| 10000 | 45.0863 |
Associated Product
