IXTP10N60P
Part NoIXTP10N60P
ManufacturerIXYS
DescriptionMOSFET N-CH 600V 10A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)740mOhm @ 5A, 10V
RdsOn(Max)@Id5.5V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1610 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature200W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11733
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.646 | |
| 10 | 2.5931 | |
| 100 | 2.5137 | |
| 1000 | 2.4343 | |
| 10000 | 2.3285 |
Associated Product
