IXTP32N65X
Part NoIXTP32N65X
ManufacturerIXYS
DescriptionMOSFET N-CH 650V 32A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesUltra X
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)135mOhm @ 16A, 10V
RdsOn(Max)@Id5.5V @ 250µA
Vgs54 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2205 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature500W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7767
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.5756 | |
| 10 | 5.4641 | |
| 100 | 5.2968 | |
| 1000 | 5.1296 | |
| 10000 | 4.9065 |
Associated Product
