IXTP3N100D2
Part NoIXTP3N100D2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 3A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)5.5Ohm @ 1.5A, 0V
RdsOn(Max)@Id-
Vgs37.5 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1020 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6059
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.95 | |
| 10 | 4.851 | |
| 100 | 4.7025 | |
| 1000 | 4.554 | |
| 10000 | 4.356 |
Associated Product
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