IXTP4N80P
Part NoIXTP4N80P
ManufacturerIXYS
DescriptionMOSFET N-CH 800V 3.6A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C3.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.4Ohm @ 500mA, 10V
RdsOn(Max)@Id5.5V @ 100µA
Vgs14.2 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)750 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5623
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.19 | |
| 10 | 3.1262 | |
| 100 | 3.0305 | |
| 1000 | 2.9348 | |
| 10000 | 2.8072 |
Associated Product
