IXTT50P10
Part NoIXTT50P10
ManufacturerIXYS
DescriptionMOSFET P-CH 100V 50A TO268
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)55mOhm @ 25A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs140 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268AA
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5220
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.9316 | |
| 10 | 6.793 | |
| 100 | 6.585 | |
| 1000 | 6.3771 | |
| 10000 | 6.0998 |
Associated Product
