IXTU2N80P
Part NoIXTU2N80P
ManufacturerIXYS
DescriptionMOSFET N-CH 800V 2A TO251
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolarHV™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6Ohm @ 1A, 10V
RdsOn(Max)@Id5.5V @ 50µA
Vgs10.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)440 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature70W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251AA
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13661
Pricing
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Associated Product
