LSIC1MO120T0160-TU
Part NoLSIC1MO120T0160-TU
ManufacturerIXYS
Description1200V/160MOHM SIC MOSFET TO-263-
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8240
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.5557 | |
| 10 | 9.3646 | |
| 100 | 9.0779 | |
| 1000 | 8.7912 | |
| 10000 | 8.409 |
Associated Product
