ICE20N60W
Part NoICE20N60W
ManufacturerIceMOS Technology
DescriptionSuperjunction MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 10A, 10V
RdsOn(Max)@Id3.9V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds236W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247
MountingTypeTO-247-3
SupplierDevicePackage2064 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12970
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.392 | |
| 10 | 2.3442 | |
| 100 | 2.2724 | |
| 1000 | 2.2006 | |
| 10000 | 2.105 |
Associated Product
