BSC039N06NSATMA1
RoHS

BSC039N06NSATMA1

Part NoBSC039N06NSATMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 60V 19A/100A TDSON
Datasheet Download Now!
ECAD Module BSC039N06NSATMA1
Get Quotation Now!
Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Fall Time7 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time12 ns
Schedule B8541290080
Halogen FreeHalogen Free
Number of Pins8
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity5000
Input Capacitance2 nF
Power Dissipation2.5 W
Threshold Voltage2.1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
On-State Resistance3.9 mΩ
Turn-Off Delay Time20 ns
Max Power Dissipation69 W
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.3 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)100 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock: 16875
Pricing
QTY UNIT PRICE EXT PRICE
1 1.68
10 1.6464
100 1.596
1000 1.5456
10000 1.4784
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
1011GN-125E
1011GN-125E
Microchip
RF MOSFET HEMT 50V 55-QQ
ART150PEGY
ART150PEGY
Ampleon
RF MOSFET LDMOS SOT12242
2SJ279S-E
2SJ279S-E
Renesas
P-CHANNEL POWER MOSFET
BSC091N03MSCGATMA1
BSC091N03MSCGATMA1
Infineon
POWER FIELD-EFFECT TRANSISTOR, 1
FDC8878
FDC8878
onsemi
MOSFET N-CH 30V 8A/8A SUPERSOT6
AM50N06-15D-CT
AM50N06-15D-CT
Analog Power Inc.
MOSFET N-CH 60V 51A TO-252 (D-Pa