BSB165N15NZ3GXUMA3
Part NoBSB165N15NZ3GXUMA3
ManufacturerInfineon Technologies
DescriptionTRENCH >=100V
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 75 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2-9
Package / CaseDirectFET™ Isometric MZ
Grade-
Qualification-
In Stock:
2738
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.722 | |
| 10 | 1.687 | |
| 100 | 1.64 | |
| 1000 | 1.58 | |
| 10000 | 1.52 |
Associated Product
