FF3MR12KM1HPHPSA1
Part NoFF3MR12KM1HPHPSA1
ManufacturerInfineon Technologies
DescriptionFF3MR12KM1HPHPSA1
Datasheet
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Specification
PackageBox
SeriesCoolSiC™
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C220A
Rds On (Max) @ Id, Vgs4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds24200pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-62MMHB
Grade-
Qualification-
In Stock:
2783
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 408.63 | |
10 | 400.457 | |
100 | 388.2 | |
1000 | 375.94 | |
10000 | 359.59 |