IMBG65R009M1HXTMA1
Part NoIMBG65R009M1HXTMA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Mounting Type-
Supplier Device Package-
Package / Case-
Drive Voltage (Max Rds On, Min Rds On)-
Vgs (Max)-
Power Dissipation (Max)-
Operating Temperature-
Grade-
Qualification-
In Stock:
2336
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.311 | |
| 10 | 22.845 | |
| 100 | 22.15 | |
| 1000 | 21.45 | |
| 10000 | 20.51 |
Associated Product
