IMBG65R083M1HXTMA1
Part NoIMBG65R083M1HXTMA1
ManufacturerInfineon
DescriptionSILICON CARBIDE MOSFET PG-TO263-
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSIC™ M1
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)111mOhm @ 11.2A, 18V
RdsOn(Max)@Id5.7V @ 3.3mA
Vgs19 nC @ 18 V
Vgs(th)(Max)@Id+23V, -5V
Vgs(Max)624 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature126W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-7-12
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7476
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.943 | |
| 10 | 8.7641 | |
| 100 | 8.4959 | |
| 1000 | 8.2276 | |
| 10000 | 7.8698 |
Associated Product
