IMW65R030M1HXKSA1
Part NoIMW65R030M1HXKSA1
ManufacturerInfineon
DescriptionSILICON CARBIDE MOSFET, PG-TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)42mOhm @ 29.5A, 18V
RdsOn(Max)@Id5.7V @ 8.8mA
Vgs48 nC @ 18 V
Vgs(th)(Max)@Id+20V, -2V
Vgs(Max)1643 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature197W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-3-41
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4634
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.6206 | |
| 10 | 15.3082 | |
| 100 | 14.8396 | |
| 1000 | 14.371 | |
| 10000 | 13.7461 |
Associated Product
