IMW65R039M1HXKSA1
Part NoIMW65R039M1HXKSA1
ManufacturerInfineon
DescriptionSILICON CARBIDE MOSFET, PG-TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C46A (Tc)
DriveVoltage(MaxRdsOn50mOhm @ 25A, 18V
MinRdsOn)5.7V @ 7.5mA
RdsOn(Max)@Id41 nC @ 18 V
Vgs+20V, -2V
Vgs(th)(Max)@Id1393 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds176W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO247-3-41
MountingTypeTO-247-3
SupplierDevicePackage18V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7788
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.4312 | |
| 10 | 12.1826 | |
| 100 | 11.8096 | |
| 1000 | 11.4367 | |
| 10000 | 10.9395 |
Associated Product
