IMW65R083M1HXKSA1
Part NoIMW65R083M1HXKSA1
ManufacturerInfineon
DescriptionSILICON CARBIDE MOSFET, PG-TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C24A (Tc)
DriveVoltage(MaxRdsOn111mOhm @ 11.2A, 18V
MinRdsOn)5.7V @ 3.3mA
RdsOn(Max)@Id19 nC @ 18 V
Vgs+20V, -2V
Vgs(th)(Max)@Id624 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds104W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO247-3-41
MountingTypeTO-247-3
SupplierDevicePackage18V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4314
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.6378 | |
| 10 | 12.385 | |
| 100 | 12.0059 | |
| 1000 | 11.6268 | |
| 10000 | 11.1213 |
Associated Product
