IMZ120R045M1XKSA1
Part NoIMZ120R045M1XKSA1
ManufacturerInfineon Technologies
DescriptionSICFET N-CH 1200V 52A TO247-4
Datasheet
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ECAD Module
Specification
PackageTray
SeriesCoolSiC™
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C52A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)59mOhm @ 20A, 15V
RdsOn(Max)@Id5.7V @ 10mA
Vgs52 nC @ 15 V
Vgs(th)(Max)@Id+20V, -10V
Vgs(Max)1900 pF @ 800 V
InputCapacitance(Ciss)(Max)@VdsCurrent Sensing
FETFeature228W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-4-1
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14109
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 22.678 | |
| 10 | 22.2244 | |
| 100 | 21.5441 | |
| 1000 | 20.8638 | |
| 10000 | 19.9566 |
Associated Product
