IMZ120R090M1HXKSA1
Part NoIMZ120R090M1HXKSA1
ManufacturerInfineon
DescriptionSICFET N-CH 1.2KV 26A TO247-4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)117mOhm @ 8.5A, 18V
RdsOn(Max)@Id5.7V @ 3.7mA
Vgs21 nC @ 18 V
Vgs(th)(Max)@Id+23V, -7V
Vgs(Max)707 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature115W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-4-1
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6455
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.324 | |
| 10 | 15.0175 | |
| 100 | 14.5578 | |
| 1000 | 14.0981 | |
| 10000 | 13.4851 |
Associated Product
