IMZA120R030M1HXKSA1
Part NoIMZA120R030M1HXKSA1
ManufacturerInfineon
DescriptionSIC DISCRETE
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C70A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)40.9mOhm @ 25.6A, 18V
RdsOn(Max)@Id5.2V @ 11mA
Vgs68 nC @ 18 V
Vgs(th)(Max)@Id+20V, -7V
Vgs(Max)2160 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature273W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-4-U02
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16256
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.8884 | |
| 10 | 24.3906 | |
| 100 | 23.644 | |
| 1000 | 22.8973 | |
| 10000 | 21.9018 |
Associated Product
