STI33N65M2
Part NoSTI33N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 24A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ M2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C24A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)140mOhm @ 12A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs41.5 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1790 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature190W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17932
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.519 | |
| 10 | 3.4486 | |
| 100 | 3.343 | |
| 1000 | 3.2375 | |
| 10000 | 3.0967 |
Associated Product
