IPB70N10S3L12ATMA2
RoHS

IPB70N10S3L12ATMA2

Part NoIPB70N10S3L12ATMA2
ManufacturerInfineon Technologies
DescriptionMOSFET_(75V 120V(
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ECAD Module IPB70N10S3L12ATMA2
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Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5570 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GradeAutomotive
QualificationAEC-Q101
In Stock: 2311
Pricing
QTY UNIT PRICE EXT PRICE
1 1.258
10 1.233
100 1.2
1000 1.16
10000 1.11
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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