IPC302N20N3X1SA1
Part NoIPC302N20N3X1SA1
ManufacturerInfineon
DescriptionMOSFET N-CH 200V 1A SAWN ON FOIL
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesOptiMOS™
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSawn on foil
Package / CaseDie
Grade-
Qualification-
In Stock:
4763
Pricing
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Associated Product
