IPD80R2K8CEATMA1
Part NoIPD80R2K8CEATMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 800V 1.9A TO252-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolMOS™ CE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C1.9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.8Ohm @ 1.1A, 10V
RdsOn(Max)@Id3.9V @ 120µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)290 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO252-3
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11630
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.196 | |
| 10 | 1.1721 | |
| 100 | 1.1362 | |
| 1000 | 1.1003 | |
| 10000 | 1.0525 |
Associated Product
