IPI147N12N3GAKSA1
RoHS

IPI147N12N3GAKSA1

Part NoIPI147N12N3GAKSA1
ManufacturerInfineon
DescriptionMOSFET N-CH 120V 56A TO262-3
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ECAD Module IPI147N12N3GAKSA1
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Specification
PackageTube
SeriesOptiMOS™
ProductStatusDiscontinued at Digi-Key
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C56A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)14.7mOhm @ 56A, 10V
RdsOn(Max)@Id4V @ 61µA
Vgs49 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3220 pF @ 60 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature107W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 7617
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product