IPI65R099C6XKSA1
Part NoIPI65R099C6XKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 38A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C38A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)99mOhm @ 12.8A, 10V
RdsOn(Max)@Id3.5V @ 1.2mA
Vgs127 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds278W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO262-3-1
MountingTypeTO-262-3 Long Leads, I2PAK, TO-262AA
SupplierDevicePackage2780 pF @ 100 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6457
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available for immediate sale in a store
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Associated Product
