IRF6810STR1PBF

Part NoIRF6810STR1PBF

ManufacturerInfineon

DescriptionMOSFET N CH 25V 16A S1

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Specification

Vgs(th) (Max) @ Id2.1V @ 25µA

Vgs (Max)±16V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageDIRECTFET S1

SeriesHEXFET®

Rds On (Max) @ Id, Vgs5.2 mOhm @ 16A, 10V

Power Dissipation (Max)2.1W (Ta), 20W (Tc)

PackagingCut Tape (CT)

Package / CaseDirectFET™ Isometric S1

Other NamesIRF6810STR1PBFCT

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1038pF @ 13V

Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)25V

Detailed DescriptionN-Channel 25V 16A (Ta), 50A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount DIRECTFET S1

Current - Continuous Drain (Id) @ 25°C16A (Ta), 50A (Tc)

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