APT1001R1BN
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APT1001R1BN

Part NoAPT1001R1BN
ManufacturerMicrochip
DescriptionMOSFET N-CH 1000V 10.5A TO247AD
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ECAD Module APT1001R1BN
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Specification
PackageTube
SeriesPOWER MOS IV®
ProductStatusObsolete
FETType10.5A (Tc)
TechnologyThrough Hole
DraintoSourceVoltage(Vdss)TO-247AD
Current-ContinuousDrain(Id)@25°CTO-247-3
DriveVoltage(MaxRdsOnN-Channel
MinRdsOn)MOSFET (Metal Oxide)
RdsOn(Max)@Id1000 V
Vgs10V
Vgs(th)(Max)@Id1.1Ohm @ 5.25A, 10V
Vgs(Max)4V @ 1mA
InputCapacitance(Ciss)(Max)@Vds130 nC @ 10 V
FETFeature±30V
PowerDissipation(Max)2950 pF @ 25 V
OperatingTemperature-
MountingType310W (Tc)
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 13899
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
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