APTM100A13SG
Part NoAPTM100A13SG
ManufacturerMicrochip
DescriptionMOSFET 2N-CH 1000V 65A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1000V (1kV)
Current-ContinuousDrain(Id)@25°C65A
RdsOn(Max)@Id156mOhm @ 32.5A, 10V
Vgs5V @ 6mA
Vgs(th)(Max)@Id562nC @ 10V
GateCharge(Qg)(Max)@Vgs15200pF @ 25V
InputCapacitance(Ciss)(Max)@Vds1250W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
Package/CaseSP6
SupplierDevicePackage
Grade
Qualification
In Stock:
5648
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 351.1784 | |
| 10 | 344.1548 | |
| 100 | 333.6195 | |
| 1000 | 323.0841 | |
| 10000 | 309.037 |
Associated Product
