APTM120A20DG
Part NoAPTM120A20DG
ManufacturerMicrochip
DescriptionMOSFET 2N-CH 1200V 50A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C50A
RdsOn(Max)@Id240mOhm @ 25A, 10V
Vgs5V @ 6mA
Vgs(th)(Max)@Id600nC @ 10V
GateCharge(Qg)(Max)@Vgs15200pF @ 25V
InputCapacitance(Ciss)(Max)@Vds1250W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
Package/CaseSP6
SupplierDevicePackage
Grade
Qualification
In Stock:
5779
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 386.7976 | |
| 10 | 379.0616 | |
| 100 | 367.4577 | |
| 1000 | 355.8538 | |
| 10000 | 340.3819 |
Associated Product
