MSCSM120DAM31CTBL1NG
Part NoMSCSM120DAM31CTBL1NG
ManufacturerMicrochip
DescriptionPM-MOSFET-SIC-SBD-BL1
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C79A
DriveVoltage(MaxRdsOn20V
MinRdsOn)31mOhm @ 40A, 20V
RdsOn(Max)@Id2.8V @ 1mA
Vgs232 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)3020 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature310W
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingType-
SupplierDevicePackageModule
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2751
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 104.6584 | |
| 10 | 102.5652 | |
| 100 | 99.4255 | |
| 1000 | 96.2857 | |
| 10000 | 92.0994 |
Associated Product
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