PSMN070-200P,127
Part NoPSMN070-200P,127
ManufacturerNXP Semiconductors
DescriptionNEXPERIA PSMN070-200P - 35A, 200
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesTrenchMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)70mOhm @ 17A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4570 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature250W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5266
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Associated Product
