PHB18NQ10T,118

Part NoPHB18NQ10T,118

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 100V 18A D2PAK

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Specification

PackageBulk

SeriesTrenchMOS™

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)100 V

Current-ContinuousDrain(Id)@25°C18A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)90mOhm @ 9A, 10V

RdsOn(Max)@Id4V @ 1mA

Vgs21 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)633 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature79W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeD2PAK

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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