PSMN7R8-120ESQ

Part NoPSMN7R8-120ESQ

ManufacturerNXP USA Inc.

DescriptionPOWER FIELD-EFFECT TRANSISTOR, 7

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Specification

PackageBulk

Series-

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)120 V

Current-ContinuousDrain(Id)@25°C70A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)7.9mOhm @ 25A, 10V

RdsOn(Max)@Id4V @ 1mA

Vgs167 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)9473 pF @ 60 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature349W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI2PAK

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 7503
available for immediate sale in a store

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