Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.5A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)55mOhm @ 2.4A, 4.5V
RdsOn(Max)@Id1.25V @ 250µA
Vgs11 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)1000 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature510mW (Ta), 4.15W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-236AB
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23147
Pricing
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