NC1M120C12HTNG
Part NoNC1M120C12HTNG
ManufacturerNextGen Components
DescriptionSiC MOSFET N 1200V 12mohm 214A
Datasheet
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ECAD Module
Specification
PackageTube
SeriesNC1M
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C214A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)20mOhm @ 100A, 20V
RdsOn(Max)@Id3.5V @ 40mA
Vgs-
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)8330 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature938W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10368
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 85.9815 | |
| 10 | 84.2619 | |
| 100 | 81.6824 | |
| 1000 | 79.103 | |
| 10000 | 75.6637 |
Associated Product
