NC1M120C75HTNG
Part NoNC1M120C75HTNG
ManufacturerNextGen Components
DescriptionSiC MOSFET N 1200V 75mohm 47A 4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesNC1M
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C47A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)75mOhm @ 20A, 20V
RdsOn(Max)@Id2.8V @ 5mA
Vgs-
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)1450 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature288W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11254
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 31.4145 | |
| 10 | 30.7862 | |
| 100 | 29.8438 | |
| 1000 | 28.9013 | |
| 10000 | 27.6448 |
Associated Product
